10N60
KSh 150.00type Designator: 10N60 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 156 W Maximum Drain-Source Voltage |Vds|: 600 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Drain Current |Id|: 10 A Maximum Junction Temperature (Tj): 150 °C Rise Time (tr): 69 nS Drain-Source Capacitance (Cd): 166 pF Maximum Drain-Source…








